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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1351 DESCRIPTION *With TO-220C package *Complement to type 2SB988 *Low collector saturation voltage APPLICATIONS *For general purpose application PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION * Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -50~150 Open emitter Open base Open collector CONDITIONS VALUE 60 60 7 3 0.5 2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE Cob fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=50mA; IB=0 IC=2A; IB=0.2A IC=0.5A ; VCE=5V VCB=60V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IE=0; VCB=10V,f=1MHz IC=0.5A ; VCE=5V 60 35 3.0 MIN 60 0.25 0.7 TYP. 2SD1351 MAX UNIT V 1.0 1.0 0.1 0.1 300 V V mA mA pF MHz Switching times ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=0.2A VCC=30V;RL=15 Duty cycle1% 0.65 1.30 0.65 s s s hFE Classifications O 60-120 Y 100-200 GR 150-300 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1351 Fig.2 Outline dimensions (unindicated tolerance:0.10mm) 3 |
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